Observation of multiple bulk bound states in the continuum modes in a photonic crystal cavity

• Rui Chen,
• Yi Zheng,
• Xingyu Huang,
• Qiaoling Lin,
• Chaochao Ye,
• Meng Xiong,
• Martijn Wubs,
• Yungui Ma,
• Minhao Pu and
• Sanshui Xiao

Beilstein J. Nanotechnol. 2023, 14, 544–551, doi:10.3762/bjnano.14.45

• -emitting devices [15][16][17][37], and nonlinear light generation [18][22][23][38][39][40]. In this paper, we propose a design of symmetry-protected BIC cavities consisting of aluminum gallium arsenide (AlGaAs) nanoblocks on a sapphire substrate. Motivated by the idea of in-plane leakage suppression by a

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland 10.3762/bjnano.12.48 Abstract In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface

• ; gallium arsenide; photovoltaics; surface passivation; Introduction The atomic layer deposition (ALD) method is used for silicon passivation in photovoltaics. In recent years we proposed the usage of ALD for the construction of simplified Si-based cells [1]. Once zinc oxide (ZnO) nanorods were employed as

• a 3D top electrode, 14% of efficiency was reached [2]. Consequently, we also turned out our attention towards gallium arsenide as a substrate/absorber for solar cells. The first results of the experiments made us aware of the potential and possible fields for improvement of ZnO/GaAs-based structures

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. Keywords: anodization; crystallographically oriented pores; gallium arsenide (GaAs); nanowires; neutral electrolyte; photocurrent; porous GaAs; Introduction

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• . Multiple studies of nanowire solar cells can be found in literature, using different materials: indium phosphide [18][19], gallium arsenide [20][21], zinc oxide [15][22], crystalline silicon [6][8][11][12][13][16][17][23][24][25][26][27][28][29][30][31][32][33][34], amorphous silicon alloys [35][36][37

Design of photonic microcavities in hexagonal boron nitride

• Sejeong Kim,
• Milos Toth and
• Igor Aharonovich

Beilstein J. Nanotechnol. 2018, 9, 102–108, doi:10.3762/bjnano.9.12

• ]. The former process is preferred when attempting to maximize the field overlap between the emitters and the cavity modes, and is often employed when using materials that are amenable to scalable nanofabrication protocols, such as gallium arsenide or silicon [17][18], and more recently diamond and

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• sputtering yields. The obtained data on sputtering yields were used for the calculation of the deposition rate of InAs and GaAs. It should be noted that the thickness of one monolayer (1ML) of gallium arsenide and indium arsenide corresponds to a flux density of f1МL = 6.26 × 1014 cm−2 and f1МL = 5.45 × 1014

• SnTe [39]. The coefficient of volume diffusion of the impurity components does not change when the gallium arsenide flux and the substrate temperature are kept constant. The decrease of RGaAs/SnTe results in a surplus of Te on the growing layer surface. The rate of Te volume diffusion becomes smaller

• is important to note that we doped not the quantum dots but the gallium arsenide spacer layers. Dark I–V measurements were carried out at a temperature of 90 K. The obtained results were shown in Figure 9. Two regions can be distinguished in the current–voltage curves. The first region is from 0.0 to

Linear and nonlinear optical properties of hybrid metallic–dielectric plasmonic nanoantennas

• Mario Hentschel,
• Bernd Metzger,
• Bastian Knabe,
• Karsten Buse and
• Harald Giessen

Beilstein J. Nanotechnol. 2016, 7, 111–120, doi:10.3762/bjnano.7.13

• crystalline gallium arsenide substrate and have demonstrated enhanced second harmonic emission caused by the interplay of the local near-field of the split-ring resonator and the substrate. Recently, Alu and Belkin have reported similar results in the mid-infrared spectral region [70]. As a last example

Proinflammatory and cytotoxic response to nanoparticles in precision-cut lung slices

• Stephanie Hirn,
• Nadine Haberl,
• Kateryna Loza,
• Matthias Epple,
• Wolfgang G. Kreyling,
• Barbara Rothen-Rutishauser,
• Markus Rehberg and
• Fritz Krombach

Beilstein J. Nanotechnol. 2014, 5, 2440–2449, doi:10.3762/bjnano.5.253

• blocked out excitation light. Light collection in forward direction was performed by an Olympus WI-UCD condenser, NA 0.8. Photomultiplier tubes were gallium arsenide phosphide detectors (Hamamatsu H7422-40). Images were processed and 3D rendered by using Imaris software (Bitplane, Zürich, Switzerland

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

• Domenico Melisi,
• Maria Angela Nitti,
• Marco Valentini,
• Antonio Valentini,
• Teresa Ligonzo,
• Giuseppe De Pascali and
• Marianna Ambrico

Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208

• , 70126, Italy 10.3762/bjnano.5.208 Abstract In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as

• comparable with those obtained for similar detectors with CNTs deposited by CVD [7][13][14][15]. In this work results from a photodetector based on CNTs spray-deposited on semi-insulating gallium arsenide (SI GaAs) are reported. In order to perform the morphological characterization of the resulting films

• gallium arsenide. After the spray process, in the SFS device configuration, an interdigitated 50 nm thick indium tin oxide (ITO) film was deposited from an ITO target on CNTs by means of IBS. An ITO/GaAs/Ti/Au device was also prepared as control sample. Transmission electron microscopy (FEI Tecnai G2